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| PD- 95189 IRG4PH50KDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE * High short circuit rating optimized for motor control, tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Tighter parameter distribution and higher efficiency than previous generations * IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes * Lead-Free Features Short Circuit Rated UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 2.77V @VGE = 15V, IC = 24A n-ch an nel Benefits * Latest generation 4 IGBT's offer highest power density motor controls possible * HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses * This part replaces the IRGPH50KD2 and IRGPH50MD2 products * For hints see design tip 97003 TO-247AC Absolute Maximum Ratings VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 1200 45 24 90 90 16 90 10 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A s V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --- --- --- --- --- Typ. --- --- 0.24 --- 6 (0.21) Max. 0.64 0.83 --- 40 --- Units C/W g (oz) 04/26/04 www.irf.com 1 IRG4PH50KDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 1200 -- Temperature Coeff. of Breakdown Voltage -- 0.91 Collector-to-Emitter Saturation Voltage -- 2.77 -- 3.28 -- 2.54 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -10 Forward Transconductance T 13 19 Zero Gate Voltage Collector Current -- -- -- -- Diode Forward Voltage Drop -- 2.5 -- 2.1 Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1.0mA 3.5 IC = 24A VGE = 15V -- V IC = 45A See Fig. 2, 5 -- IC = 24A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 24A 250 A VGE = 0V, VCE = 1200V 6500 VGE = 0V, VCE = 1200V, TJ = 150C 3.5 V IC = 16A See Fig. 13 3.0 IC = 16A, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 180 25 70 87 100 140 200 3.83 1.90 5.73 -- 67 72 310 390 8.36 13 2800 140 53 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 270 IC = 24A 38 nC VCC = 400V See Fig.8 110 VGE = 15V -- -- TJ = 25C ns 300 IC = 24A, VCC = 800V 300 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode reverse recovery 7.9 See Fig. 9,10,18 -- s VCC = 720V, TJ = 125C VGE = 15V, RG = 5.0 -- TJ = 150C, See Fig. 10,11,18 -- IC = 24A, VCC = 800V ns -- VGE = 15V, RG = 5.0, -- Energy losses include "tail" -- mJ and diode reverse recovery -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 135 ns TJ = 25C See Fig. 245 TJ = 125C 14 IF = 16A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 VR = 200V 675 nC TJ = 25C See Fig. 1838 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH50KDPBF 30 F o r b o th : 25 LOAD CURRENT (A) 20 S q u a re w a v e : D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 40 W 6 0% of rate d volta ge I 15 10 5 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) TJ = 150 C 10 T = 150 C J 10 TJ = 25 C TJ = 25 C 1 V = 15V 20s PULSE WIDTH GE 1 10 1 V = 50V 5s PULSE WIDTH CC 5 6 7 8 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PH50KDPBF 50 4.0 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE Maximum DC Collector Current(A) 40 3.5 IC = 48A 30 3.0 IC = 24A 2.5 20 IC = 12A 2.0 10 0 25 50 75 100 125 150 1.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH50KDPBF 4000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 3000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 24A 16 Cies 12 2000 8 1000 4 0 C oes C res 1 10 100 0 VCE , Collector-to-Emitter Voltage (V) 0 40 80 120 160 200 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 7.0 Total Switching Losses (mJ) 6.6 Total Switching Losses (mJ) V CC = 800V 960V V GE = 15V TJ = 25 C I C = 24A 100 5.0 RG = Ohm VGE = 15V 800V VCC = 960V IC = 48 A 10 6.2 IC = 24 A IC = 12 A 5.8 5.4 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG RG , Gate Resistance ( ) , Gate Resistance (Ohm) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH50KDPBF 20 Total Switching Losses (mJ) I C, Collector Current (A) 20 30 40 50 15 RG TJ VCC CC VGE = 5.0 Ohm = 150 C = 800V 960V = 15V 1000 VGE = 20V T J = 125 o C 100 10 10 5 0 SAFE OPERATING AREA 0 10 1 1 10 100 1000 10000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current 1000 Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 100 T J = 150C 10 T J = 125C T J = 25C 1 0.0 2.0 4.0 6.0 8.0 F orward V oltage D rop - V F M (V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com 300 40 IRG4PH50KDPBF VR = 200 V T J = 125C T J = 25C VR = 200V T J = 125C T J = 25C 30 200 I F = 1 6A I F = 8 .0 A I R R M - (A ) trr - (ns) IF = 3 2 A 20 I F = 32A I F = 16 A I F = 8 .0A 100 10 0 100 d i f /dt - (A / s) 1000 0 100 di f /dt - (A / s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 1200 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 2 00 V T J = 125C T J = 25C 900 VR = 200V T J = 125C T J = 25C 600 I F = 16A d i(rec )M /d t - (A / s) I F = 3 2A Q R R - (nC ) 100 I F = 32 A I F =1 6A I F = 8 .0 A I F = 8 .0A 300 0 100 di f /d t - (A / s) 1000 10 100 di f /d t - (A / s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PH50KDPBF 90% Vge +Vge Same ty pe device as D .U.T. V ce Ic 80% of Vce 430F D .U .T. 10% Vce 9 0 % Ic Ic 5 % Ic td (o ff) tf E o ff = t1 + 5 S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg Ic trr Q rr = icdt trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k V pk 1 0 % Irr V cc Irr Ic D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 t4 t1 t2 Vcicdt t4 V d id d t t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PH50KDPBF V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0F 100V Vc* D.U.T. RL= 0 - 480V 960V 4 X I C @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PH50KDPBF Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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